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Publications

Prof. Zonghoon Lee’s Atomic-Scale Electron Microscopy Lab

Publications

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Publications in Nature | Science | their sister journals


Nature 2024 /  Nature Communications, 14:4747, 2023 / Nature Communications, 13:4916, 2022 / Nature Communications, 13:2759, 2022 / Nature, 596, 519-524, 2021 Nature, 582, 511-514, 2020 / Nature Nanotechnology, 15, 289-295, 2020 / Nature Nanotechnology, 15, 59-66, 2020 / Science Advances, 6 (10), eaay4958, 2020 / Nature Electronics, 3, 207-215, 2020 / Nature Communications, 11 (1437), 2020 / Nature Energy, 3, 773-782, 2018 / Nature Communications, 8:1549, 2017 / Nature Communications, 6:8294, 2015 / Nature Communications, 6:7817, 2015 / Nature Communications, 5:3383, 2014 






Abstract


 Lightweight, flexible graphite foils that are chemically inert, high-temperature resistant, and highly electrically and thermally conductive can be used as component materials in numerous applications. “Graphenic” foils can be prepared by thermally transforming graphene oxide films. For this transformation, it is desirable to maintain a densely packed film structure at high heating rates as well as to lower the graphitizing temperatures. In this work, we discuss the pressure-assisted thermal decomposition of graphene oxide films by hot pressing at different temperatures (i.e., 300 °C, 1000 °C, or 2000 °C). The films pressed at 1000 °C or 2000 °C were subsequently heated at 2750 °C to achieve a higher degree of graphitization. The combination of heating and pressing promotes the simultaneous thermal decomposition and graphitic transformation of G-O films. Films pressed at 2000 °C as well as films further graphitized at 2750 °C show high chemical purity, uniformity, and retain their flexibility. For films pressed at 2000 °C and then further heated at 2750 °C, the mechanical performances outperform the reported values of the “graphite” foils prepared by calendering exfoliated graphite flakes; the electrical conductivity is ∼3.1 × 105 S/m and the in-plane thermal conductivity is ∼1.2 × 103 W/(m·K).

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2011

Prior to Joining UNIST, 2011

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